JPH0531760Y2 - - Google Patents
Info
- Publication number
- JPH0531760Y2 JPH0531760Y2 JP13121685U JP13121685U JPH0531760Y2 JP H0531760 Y2 JPH0531760 Y2 JP H0531760Y2 JP 13121685 U JP13121685 U JP 13121685U JP 13121685 U JP13121685 U JP 13121685U JP H0531760 Y2 JPH0531760 Y2 JP H0531760Y2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- transistors
- threshold voltage
- amplifier circuit
- channel mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003068 static effect Effects 0.000 claims description 6
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13121685U JPH0531760Y2 (en]) | 1985-08-27 | 1985-08-27 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13121685U JPH0531760Y2 (en]) | 1985-08-27 | 1985-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6239299U JPS6239299U (en]) | 1987-03-09 |
JPH0531760Y2 true JPH0531760Y2 (en]) | 1993-08-16 |
Family
ID=31029456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13121685U Expired - Lifetime JPH0531760Y2 (en]) | 1985-08-27 | 1985-08-27 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0531760Y2 (en]) |
-
1985
- 1985-08-27 JP JP13121685U patent/JPH0531760Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6239299U (en]) | 1987-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4697112A (en) | Current-mirror type sense amplifier | |
US4714840A (en) | MOS transistor circuits having matched channel width and length dimensions | |
EP0196110B1 (en) | Sensing amplifier for random access memory | |
JPH0750556A (ja) | フリップフロップ型増幅回路 | |
JP2756797B2 (ja) | Fetセンス・アンプ | |
US4949306A (en) | Sense circuit and semiconductor memory having a current-voltage converter circuit | |
JPH0531760Y2 (en]) | ||
US5412607A (en) | Semiconductor memory device | |
JPS62159905A (ja) | 半導体差動増幅器 | |
JPS6260190A (ja) | 半導体記憶装置 | |
JP2514988B2 (ja) | センスアンプ回路 | |
JP3498451B2 (ja) | 半導体記憶装置 | |
JPS5851358B2 (ja) | 半導体集積回路装置 | |
JPH0246595A (ja) | センスアンプ | |
JP2695005B2 (ja) | 電荷検出回路 | |
JPS598912B2 (ja) | 論理信号増幅回路 | |
JPH04163795A (ja) | カレント・ミラー型感知増幅器 | |
KR0153615B1 (ko) | 등화동작이 개선된 센스앰프회로 | |
JPH0578120B2 (en]) | ||
JPH03162794A (ja) | 半導体スタチックメモリ | |
JPH05274882A (ja) | 半導体記憶装置 | |
JPS61131297A (ja) | マスクrom | |
JPH03119597A (ja) | 差電圧増幅回路 | |
JPH0152928B2 (en]) | ||
JPH0155770B2 (en]) |